Naoya Nogami

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 1:45 PM - 5:45 PM S221 (S221)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:30 PM - 2:45 PM

[9p-S221-4] A study of GaAsSb / InGaAs Double-Gate Tunnel FET considering quantum effect

〇Naoya Nogami¹, Koichi Fukuda^1,2, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.AIST)