Shigeyoshi Usami

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 9:00 AM - 11:45 AM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10a-M121-1~10] 13.7 Compound and power electron devices and process technology

9:15 AM - 9:30 AM

[10a-M121-2] Threading dislocation density dependence of GaN p-n diodes with deeply etched mesa structure

〇Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hayata Fukushima¹, Yuto Ando¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

Sat. Mar 9, 2019 9:00 AM - 12:15 PM W541 (W541)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[9a-W541-1~12] 15.4 III-V-group nitride crystals

11:30 AM - 11:45 AM

△ [9a-W541-10] 【Highlight】Relationship between reverse leakage current of p-n diodes on GaN free-standing substrate and Mg existing around threading screw dislocations

〇Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Norihito Mayama⁴, Kazuya Toda⁴, Yoshihiro Sugawara⁵, Yao Yongzhao⁵, Yukari Ishikawa⁵, Yuto Ando¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,6,7 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.Toshiba Nanoanalysis Corp., 5.JFCC, 6.ARC, 7.VBL)

11:45 AM - 12:00 PM

[9a-W541-11] Relationship between reverse leakage current of p-n diodes on GaN free-standing substrate and impurities present on nanopipe surface

〇Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hayata Fukushima¹, Yuto Ando¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)