14:15 〜 14:30 ▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO2 directly deposited on Si(100) by RF magnetron sputtering 〇MinGee Kim1、Masakazu Kataoka1、Rengie Mark D. Mailig1、Shun-ichiro Ohmi1 (1.Tokyo Tech.)