Oral presentation

Code-sharing session » 【CS.5】Code-sharing Session of 6.1 & 13.3 & 13.5

[10p-W631-1~12] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

Sun. Mar 10, 2019 1:45 PM - 5:00 PM W631 (W631)

Masaharu Kobayashi(Univ. of Tokyo), Takao Shimizu(Tokyo Tech), Shosuke Fujii(Toshiba Memory)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[10p-W631-1] The effect of O₂ partial pressure during sputtering on crystal growth and structure of HfO₂-based ferroelectric thin films

〇Kenshi Takada¹, Yuki Saho¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

2:00 PM - 2:15 PM

[10p-W631-2] The effect of O₂ partial pressure during sputtering on the crystallographic and
electrical properties of HfO₂-based thin films

〇Yuki Saho¹, Kenshi Takada¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

2:15 PM - 2:30 PM

▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO₂ directly deposited on Si(100) by RF magnetron sputtering

〇MinGee Kim¹, Masakazu Kataoka¹, Rengie Mark D. Mailig¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

2:30 PM - 2:45 PM

[10p-W631-4] The role of dopant in ferroelectric HfO₂

〇Yuki Mori¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

2:45 PM - 3:00 PM

[10p-W631-5] Mechanism of ferroelectric phase reduction in HfO₂ due to oxidizing thermal treatment

〇Takeaki Yajima¹, Yuki Mori¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

3:00 PM - 3:15 PM

[10p-W631-6] Stability of orthorhombic and monoclinic HfO₂in charged states: first-principles study

〇Yuto Shiraishi¹, Riki Nagasawa¹, Masaaki Aradai², Kenji Shiraishi², Takashi Nakayama¹ (1.Chiba Univ., 2.Nagoya Univ.)

3:30 PM - 3:45 PM

[10p-W631-7] [Young Scientist Presentation Award Speech] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

3:45 PM - 4:00 PM

[10p-W631-8] Ferroelectricity of Hf_xZr₁_−xO₂ thin films fabricated using low temperature process at 300 °C

〇Takashi Onaya^1,2,3, Toshihide Nabatame², Naomi Sawamoto¹, Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC)

4:00 PM - 4:15 PM

△ [10p-W631-9] Unipolar Switching Characteristics of MIS Structure with Antiferroelectric ZrO₂

〇(M2)Yusaku Tagawa¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

4:15 PM - 4:30 PM

[10p-W631-10] Origin of Steep-Subthreshold Swing Behaviors in Ferroelectric FETs

〇Shinji Migita¹, Hiroyuki Ota¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

4:30 PM - 4:45 PM

▼ [10p-W631-11] Polarization Switching as the Cause of Steep Subthreshold Slope in Ferroelectric FETs

〇(D)Chengji Jin¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

4:45 PM - 5:00 PM

[10p-W631-12] Simulation on Coherency of Polarization in Ferroelectric Negative Capacitance and Its Evolution Based on TCAD

〇Hiroyuki Ota¹, Tsutomu Ikegami¹, Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kazuhiko Endo¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

Session information

[10p-W631-1~12] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

[10p-W631-1] The effect of O₂ partial pressure during sputtering on crystal growth and structure of HfO₂-based ferroelectric thin films

[10p-W631-2] The effect of O₂ partial pressure during sputtering on the crystallographic and
electrical properties of HfO₂-based thin films

▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO₂ directly deposited on Si(100) by RF magnetron sputtering

[10p-W631-4] The role of dopant in ferroelectric HfO₂

[10p-W631-5] Mechanism of ferroelectric phase reduction in HfO₂ due to oxidizing thermal treatment

[10p-W631-6] Stability of orthorhombic and monoclinic HfO₂in charged states: first-principles study

[10p-W631-7] [Young Scientist Presentation Award Speech] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory

[10p-W631-8] Ferroelectricity of Hf_xZr₁_−xO₂ thin films fabricated using low temperature process at 300 °C

△ [10p-W631-9] Unipolar Switching Characteristics of MIS Structure with Antiferroelectric ZrO₂

[10p-W631-10] Origin of Steep-Subthreshold Swing Behaviors in Ferroelectric FETs

▼ [10p-W631-11] Polarization Switching as the Cause of Steep Subthreshold Slope in Ferroelectric FETs

[10p-W631-12] Simulation on Coherency of Polarization in Ferroelectric Negative Capacitance and Its Evolution Based on TCAD

Authentication

Session information

[10p-W631-1~12] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO2 directly deposited on Si(100) by RF magnetron sputtering

△ [10p-W631-9] Unipolar Switching Characteristics of MIS Structure with Antiferroelectric ZrO2

▼ [10p-W631-11] Polarization Switching as the Cause of Steep Subthreshold Slope in Ferroelectric FETs

Authentication

▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO₂ directly deposited on Si(100) by RF magnetron sputtering

△ [10p-W631-9] Unipolar Switching Characteristics of MIS Structure with Antiferroelectric ZrO₂