The 66th JSAP Spring Meeting, 2019

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Oral presentation

Code-sharing session » 【CS.5】Code-sharing Session of 6.1 & 13.3 & 13.5

[10p-W631-1~12] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

Sun. Mar 10, 2019 1:45 PM - 5:00 PM W631 (W631)

Masaharu Kobayashi(Univ. of Tokyo), Takao Shimizu(Tokyo Tech), Shosuke Fujii(Toshiba Memory)

1:45 PM - 2:00 PM

[10p-W631-1] The effect of O2 partial pressure during sputtering on crystal growth and structure of HfO2-based ferroelectric thin films

〇Kenshi Takada1, Yuki Saho1, Daisuke Kiriya1, Takeshi Yoshimura1, Atsushi Ashida1, Norifumi Fujimura1 (1.Osaka Pref. Univ.)

Keywords:HfO2, ferroelectric material