Takuji Hosoi

→ Search for Takuji Hosoi in Google Scholar

Speaker, Author, Co-Author

Sun. Mar 10, 2019 9:00 AM - 12:00 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

10:30 AM - 10:45 AM

[10a-70A-6] Thermal oxidation of 4H-SiC under CO₂ ambient

〇Takuji Hosoi¹, Momoe Ohsako¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

[10a-70A-7] Improved characteristics of 4H-SiC(0001) MOS devices by CO₂ annealing

〇Takuji Hosoi¹, Momoe Ohsako¹, Takasyoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)