Katsumi Nakamura

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 1:30 PM - 5:50 PM W922 (Multi-Purpose Digital Hall)

Symposium (Oral)
| Symposium
| Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

[10p-W922-1~8] Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-

2:00 PM - 2:30 PM

[10p-W922-2] Advanced Si Power Semiconductor with High Dynamic Ruggedness utilizing Novel Vertical Structure

〇Katsumi Nakamura¹, Kenji Suzuki¹, Koichi Nishi¹ (1.Power Device Works, Mitsubishi Electric Corporation)