FEI MO

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 1:30 PM - 4:45 PM W934 (W934)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:45 PM - 3:00 PM

[10p-W934-5] Scalability Study on Ferroelectric-HfO₂ Tunnel Junction Memory

〇FEI MO¹, Tagawa yusaku¹, Saraya Takuya¹, Hiramoto Toshiro¹, Kobayashi Masaharu¹ (1.IIs, univ. of Tokyo)