SHOHEI HAYASHI

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

4:00 PM - 4:15 PM

[11p-70A-12] Relationship between basal-plane dislocation depth and stacking fault expansion current density in forward-current degradation of 4H-SiC PiN diode

〇SHOHEI HAYASHI^1,2, Tamotsu Yamashita^1,3, Junji Senzaki¹, Koji Nakayama¹, Mayumi Morizuka¹, Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST, 2.Toray Research Center, 3.Showa Denko)

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