Takuma Narahara

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

4:30 PM - 4:45 PM

[11p-70A-14] Effects of Ion Beam Conditions on Nitrogen-Vacancy Center Formation in 4H-SiC

〇(B)Takuma Narahara^1,2, Shinichiro Sato², Yasuto Hijikata¹, Takeshi Oshima² (1.Saitama Univ., 2.QST)