Takahiro Kanda

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:00 PM - 5:30 PM 70A (70th Anniversary Auditorium)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[11p-70A-1~17] 15.6 Group IV Compound Semiconductors (SiC)

2:15 PM - 2:30 PM

[11p-70A-6] Development of Φ6inch 4H-SiC Crystals in High-temperature Gas Source Method

〇Takahiro Kanda¹, Takeshi Okamoto¹, Yuichiro Tokuda¹, Gen Suzuki¹, Nobuyuki Ooya¹, Emi Makino¹, Hideyuki Uehigashi¹, Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1.DENSO CORPORATION, 2.CRIEPI)

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