Jun Nishimura

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:15 PM - 7:00 PM M113 (H113)

Oral presentation
| 6 Thin Films and Surfaces
| 6.2 Carbon-based thin films

[11p-M113-1~20] 6.2 Carbon-based thin films

2:00 PM - 2:15 PM

△ [11p-M113-3] Vertical-type 2DHG Diamond MOSFET ; Achievement of High Drain Current Operation (~1 A) by Gate Width 10 mm

〇(B)Jun Nishimura¹, Nobutaka Oi¹, Masayuki Iwataki¹, Ikuto Tsuyuzaki¹, Satoshi Okubo¹, Taisuke Kageura¹, Atsushi Hiraiwa^1,2, Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Waseda ZAIKEN.)

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