1:30 PM - 3:30 PM [11p-PA4-13] GaSb thickness dependence of InAs / GaSb superlattice grown by the metalorganic chemical vapor deposition growth method analyzed by Raman scattering measurement 〇Taiki Aso1, Koji Maeda1, Masakazu Arai1, Yuya Yamagata1 (1.Miyazaki Univ.)