1:30 PM - 3:30 PM [11p-PB3-11] Effects of forming gas annealing on electrical properties of Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTs 〇(M1)Keita Furuoka1, Toshiharu Kubo1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)