Makoto Baba

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[11p-PB3-19] Nitride semiconductor device application of silicon dioxide by chemical vapor deposition enhanced by atomic oxygen at the ground level

〇Makoto Baba¹, Yuto Kakiuchi¹, Hiroshi Okada¹, Masakazu Furukawa², Keisuke Yamane¹, Hiroto Sekiguchi¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

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