Kento Nakamura

→ Search for Kento Nakamura in Google Scholar

Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[11p-PB3-20] Study of Insulated Gate GaN-based Transistor using Chemical Vapor Deposition Method Enhanced by Atmic Oxygen at the ground level

〇Kento Nakamura¹, Makoto Baba¹, Hiroshi Okada¹, Masakazu Furukawa², Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

▲