Takuya Hoshi

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[11p-PB3-9] GaN-channel HEMT with Al_0.05Ga_0.95N back barrier on high-resistivity Si substrate

〇Takuya Hoshi¹, Sugiyama Hiroki¹, Nakajima Fumito¹, Matsuzaki Hideaki¹ (1.NTT Device Technology Labs, NTT Corporation)