Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[10a-W323-1~9] 6.4 Thin films and New materials

Sun. Mar 10, 2019 9:00 AM - 12:15 PM W323 (W323)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-W323-1] Stability of very thin Al, Ti layer deposited Ag thin films under high humidity

Eita Kudo¹, 〇Midori Kawamura¹, Takayuki Kiba¹, Yoshio Abe¹, Kyung Ho Kim¹, Mai Hayamizu², Hiroshi Murotani² (1.Kitami Inst. of Tech., 2.Tokai Univ.)

9:15 AM - 9:30 AM

[10a-W323-2] Study on growth temperatures and relaxation of lattice strain in the epitaxial Pt/SrTiO₃(111) films

〇Masahiro Kasai¹, Hideyuki Dohi¹ (1.Kyushu Univ.)

9:30 AM - 9:45 AM

[10a-W323-3] Fabrication of ionic liquid polycrystalline nano thin films and their ion conducting properties accompanied by solid-liquid phase transition

〇Yuji Matsumoto¹, Aya Yoshii¹, Shingo Maruyama¹, Tomoyuki Koganezawa², Kaho Toyabe¹, Ryoji Takazawa¹ (1.Tohoku Univ., 2.JASRI)

9:45 AM - 10:00 AM

▲ [10a-W323-4] Electrical properties of non-degenerate ZnSnN₂ thin films grown by non-equilibrium deposition

〇Yong WANG¹, Takeo OHSAWA¹, Naoki OHASHI¹ (1.NIMS)

10:00 AM - 10:15 AM

▲ [10a-W323-5] Deposition temperature dependence on N-doped LaB₆ thin film utilizing RF sputtering

〇(D)KyungEun Park¹, Yuki Komatsu¹, Yasutaka Maeda¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

10:15 AM - 10:30 AM

[10a-W323-6] Growth of Lanthanum Hexaboride Films for High-Temperature IR Emitters

R.P. Sugavaneshwar¹, D.T. Ngo^1,2, Naoki Furuhata¹, 〇Tadaaki Nagao^1,2 (1.MANA-NIMS, 2.Hokkaido Univ.)

10:30 AM - 10:45 AM

[10a-W323-7] Work Function and Electronic Structure Measurements on Nitrogen-doped LaB₆ Thin Film by STM

〇Katsumi Nagaoka¹, Shun-ichiro Ohmi² (1.NIMS, 2.Tokyo Tech.)

11:00 AM - 11:15 AM

[10a-W323-8] Fabrication of ambipolar transistors using copper nitride thin film channel layers

〇Kosuke Matsuzaki¹, Takayoshi Katase², Hideo Hosono^1,2 (1.Tokyo Tech MCES, 2.Tokyo Tech MSL)

11:15 AM - 12:15 PM

[10a-W323-9] [INVITED] Materials Design of Novel Wide gap Semiconductors

〇Hideo Hosono¹ (1.Tokyo Tech)

Session information

[10a-W323-1~9] 6.4 Thin films and New materials

[10a-W323-1] Stability of very thin Al, Ti layer deposited Ag thin films under high humidity

[10a-W323-2] Study on growth temperatures and relaxation of lattice strain in the epitaxial Pt/SrTiO₃(111) films

[10a-W323-3] Fabrication of ionic liquid polycrystalline nano thin films and their ion conducting properties accompanied by solid-liquid phase transition

▲ [10a-W323-4] Electrical properties of non-degenerate ZnSnN₂ thin films grown by non-equilibrium deposition

▲ [10a-W323-5] Deposition temperature dependence on N-doped LaB₆ thin film utilizing RF sputtering

[10a-W323-6] Growth of Lanthanum Hexaboride Films for High-Temperature IR Emitters

[10a-W323-7] Work Function and Electronic Structure Measurements on Nitrogen-doped LaB₆ Thin Film by STM

[10a-W323-8] Fabrication of ambipolar transistors using copper nitride thin film channel layers

[10a-W323-9] [INVITED] Materials Design of Novel Wide gap Semiconductors

Authentication

Session information

[10a-W323-1~9] 6.4 Thin films and New materials

[10a-W323-1] Stability of very thin Al, Ti layer deposited Ag thin films under high humidity

[10a-W323-2] Study on growth temperatures and relaxation of lattice strain in the epitaxial Pt/SrTiO3(111) films

[10a-W323-3] Fabrication of ionic liquid polycrystalline nano thin films and their ion conducting properties accompanied by solid-liquid phase transition

▲ [10a-W323-4] Electrical properties of non-degenerate ZnSnN2 thin films grown by non-equilibrium deposition

▲ [10a-W323-5] Deposition temperature dependence on N-doped LaB6 thin film utilizing RF sputtering

[10a-W323-6] Growth of Lanthanum Hexaboride Films for High-Temperature IR Emitters

[10a-W323-7] Work Function and Electronic Structure Measurements on Nitrogen-doped LaB6 Thin Film by STM

[10a-W323-8] Fabrication of ambipolar transistors using copper nitride thin film channel layers

[10a-W323-9] [INVITED] Materials Design of Novel Wide gap Semiconductors

Authentication

[10a-W323-2] Study on growth temperatures and relaxation of lattice strain in the epitaxial Pt/SrTiO₃(111) films

▲ [10a-W323-4] Electrical properties of non-degenerate ZnSnN₂ thin films grown by non-equilibrium deposition

▲ [10a-W323-5] Deposition temperature dependence on N-doped LaB₆ thin film utilizing RF sputtering

[10a-W323-7] Work Function and Electronic Structure Measurements on Nitrogen-doped LaB₆ Thin Film by STM