[10a-W351-1~6] 9.4 Thermoelectric conversion

Sun. Mar 10, 2019 10:30 AM - 12:00 PM W351 (W351)

Kaoru Toko(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:30 AM - 10:45 AM

[10a-W351-1] Compressive-stress-induced quantum effect in Bi nanowires

〇Takashi Komine¹, Tomosuke Aono¹, Masayuki Murata², Yasuhiro Hasegawa³ (1.Ibaraki University, 2.AIST, 3.Saitama University)

10:45 AM - 11:00 AM

[10a-W351-2] Thermoelectric properties of Au and B co-doped Si-Ge thin films

〇Kotaro Hirose¹, Masahiro Adachi¹, Shunsuke Nishino¹, Yoshiyuki Yamamoto¹, Tsunehiro Takeuchi² (1.Sumitomo Elec. Ind., 2.Toyota Tech. Inst.)

11:00 AM - 11:15 AM

[10a-W351-3] Thermoelectric properties of epitaxial CaSi₂ films including multilayer silicene

〇Tsukasa Terada¹, Yuto Uematsu¹, Takafumi Ishibe¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

11:15 AM - 11:30 AM

[10a-W351-4] Further reduction of thermal conductivity in Si-rich SiGe/Si superlattices with high thermoelectric power factor

〇(D)Tatsuhiko Taniguchi¹, Takafumi Ishibe¹, Md. Mahfuz Alam², Kentarou Sawano², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Tokyo City Univ.)

11:30 AM - 11:45 AM

[10a-W351-5] Thermoelectric performances of BaSi₂ film/Si with complex crystal structure

〇Takafumi Ishibe¹, Jinichiro Chikada¹, Suguru Yachi², Yudai Yamashita², Takashi Suemasu², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Univ. of Tsukuba)

11:45 AM - 12:00 PM

[10a-W351-6] Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process

〇(M1C)Kodai Aoyama¹, Takao Shimizu¹, Hideto Kuramochi², Masami Mesuda², Ryo Akiike², Keisuke Ide¹, Takayoshi Katase¹, Toshio Kamiya¹, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Univ., 2.Tosoh corporation)

Session information

[10a-W351-1~6] 9.4 Thermoelectric conversion

[10a-W351-1] Compressive-stress-induced quantum effect in Bi nanowires

[10a-W351-2] Thermoelectric properties of Au and B co-doped Si-Ge thin films

[10a-W351-3] Thermoelectric properties of epitaxial CaSi₂ films including multilayer silicene

[10a-W351-4] Further reduction of thermal conductivity in Si-rich SiGe/Si superlattices with high thermoelectric power factor

[10a-W351-5] Thermoelectric performances of BaSi₂ film/Si with complex crystal structure

[10a-W351-6] Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process

Authentication

Session information

[10a-W351-1~6] 9.4 Thermoelectric conversion

[10a-W351-1] Compressive-stress-induced quantum effect in Bi nanowires

[10a-W351-2] Thermoelectric properties of Au and B co-doped Si-Ge thin films

[10a-W351-3] Thermoelectric properties of epitaxial CaSi2 films including multilayer silicene

[10a-W351-4] Further reduction of thermal conductivity in Si-rich SiGe/Si superlattices with high thermoelectric power factor

[10a-W351-5] Thermoelectric performances of BaSi2 film/Si with complex crystal structure

[10a-W351-6] Thermoelectric property for BaxSr1-xSi2 films by co-sputtering process

Authentication

[10a-W351-3] Thermoelectric properties of epitaxial CaSi₂ films including multilayer silicene

[10a-W351-5] Thermoelectric performances of BaSi₂ film/Si with complex crystal structure

[10a-W351-6] Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process