Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10a-W541-1~12] 15.4 III-V-group nitride crystals

Sun. Mar 10, 2019 9:00 AM - 12:15 PM W541 (W541)

Tsutomu Araki(Ritsumeikan Univ.), Yoshihiro Kangawa(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-W541-1] Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective

〇(M1)Yuto Okawachi¹, Kenta Chokawa¹, Masaaki Araidai², Akira Kusaba³, Yoshihiro Kangawa^3,2, Koichi Kakimoto³, Kenji Shiraishi^2,1 (1.Graduate School of Engineering, Nagoya Univ, 2.IMaSS, Nagoya Univ, 3.RIAM, Kyushu Univ)

9:15 AM - 9:30 AM

[10a-W541-2] Analysis of Gas Phase Reaction for Trimethylaluminium and Ammonia by Time-of-Flight Mass Spectrometry

〇(M2)Takehiro Oyama¹, Zheng Ye¹, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda^2,3, Hiroshi Amano² (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.IAR, Nagoya Univ.)

9:30 AM - 9:45 AM

[10a-W541-3] Temperature dependence of Cp₂Mg using in-situ monitoring in MOVPE reactor

〇Yoko Sato¹, Daisuke Hayashi¹, Masakazu Minami¹, Noboru Muramatsu², Motoaki Iwaya² (1.HORIBA STEC, 2.Meijo Univ.)

9:45 AM - 10:00 AM

△ [10a-W541-4] P-type conduction control of AlN surfaces by carbon doping

〇Katsuhiro Kishimoto¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[10a-W541-5] Epitaxial growth of III-nitrides on SiC thin film formed by carbonization of Si surface

〇Momoko Deura¹, Yifu Zhu¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (1.Univ. of Tokyo)

10:15 AM - 10:30 AM

▲ [10a-W541-6] Dependence of TMAl preflow condition on GaN growth on surface carbonized Si substrates

〇Yifu Zhu¹, Takeshi Momose¹, Yukihiro Shimogaki¹, Momoko Deura¹ (1.Univ. of Tokyo)

10:45 AM - 11:00 AM

[10a-W541-7] CVD growth of BN thin films by using B₂H₆

〇Hisashi Yamada¹, Sho Inotsume^1,2, Toshikazu Yamada¹, Mituaki Shimizu^1,2 (1.AIST-NU, 2.Nagoya-Univ.)

11:00 AM - 11:15 AM

△ [10a-W541-8] Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures

〇(M1)Takashi Fujita¹, Shigeta Sakai¹, Yuma Ikeda¹, Atsushi A. Yamaguchi¹, Yuya Kanitani², Shigetaka Tomiya² (1.Kanazawa Inst. Tech., 2.Sony)

11:15 AM - 11:30 AM

[10a-W541-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers (2)

〇Satoshi Kurai¹, Kohei Okawa¹, Ryoga Makio¹, Junji Gao¹, Naoya Hayashi¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

11:30 AM - 11:45 AM

▲ [10a-W541-10] Reduction of the linewidth of the emission lines from a GaN interface fluctuation quantum dot

〇(P)Kang Gao¹, Munetaka Arita¹, Mark Holmes^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, 2.IIS, Univ. of Tokyo)

11:45 AM - 12:00 PM

▲ [10a-W541-11] Measurement of the power dependence of spectral diffusion from a single InGaN quantum dot

〇(P)Kang Gao¹, Helen Springbett³, Tongtong Zhu³, Rachel Oliver³, Yasuhiko Arakawa¹, Mark Holmes^1,2 (1.NanoQuine, 2.IIS, Univ. of Tokyo, 3.Univ. of Cambridge, UK)

12:00 PM - 12:15 PM

[10a-W541-12] Enhanced red emissions from GaN:Eu under strong excitation condition

〇Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Session information

[10a-W541-1~12] 15.4 III-V-group nitride crystals

[10a-W541-1] Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective

[10a-W541-2] Analysis of Gas Phase Reaction for Trimethylaluminium and Ammonia by Time-of-Flight Mass Spectrometry

[10a-W541-3] Temperature dependence of Cp₂Mg using in-situ monitoring in MOVPE reactor

△ [10a-W541-4] P-type conduction control of AlN surfaces by carbon doping

[10a-W541-5] Epitaxial growth of III-nitrides on SiC thin film formed by carbonization of Si surface

▲ [10a-W541-6] Dependence of TMAl preflow condition on GaN growth on surface carbonized Si substrates

[10a-W541-7] CVD growth of BN thin films by using B₂H₆

△ [10a-W541-8] Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures

[10a-W541-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers (2)

▲ [10a-W541-10] Reduction of the linewidth of the emission lines from a GaN interface fluctuation quantum dot

▲ [10a-W541-11] Measurement of the power dependence of spectral diffusion from a single InGaN quantum dot

[10a-W541-12] Enhanced red emissions from GaN:Eu under strong excitation condition

Authentication

Session information

[10a-W541-1~12] 15.4 III-V-group nitride crystals

[10a-W541-1] Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective

[10a-W541-2] Analysis of Gas Phase Reaction for Trimethylaluminium and Ammonia by Time-of-Flight Mass Spectrometry

[10a-W541-3] Temperature dependence of Cp2Mg using in-situ monitoring in MOVPE reactor

△ [10a-W541-4] P-type conduction control of AlN surfaces by carbon doping

[10a-W541-5] Epitaxial growth of III-nitrides on SiC thin film formed by carbonization of Si surface

▲ [10a-W541-6] Dependence of TMAl preflow condition on GaN growth on surface carbonized Si substrates

[10a-W541-7] CVD growth of BN thin films by using B2H6

△ [10a-W541-8] Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures

[10a-W541-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers (2)

▲ [10a-W541-10] Reduction of the linewidth of the emission lines from a GaN interface fluctuation quantum dot

▲ [10a-W541-11] Measurement of the power dependence of spectral diffusion from a single InGaN quantum dot

[10a-W541-12] Enhanced red emissions from GaN:Eu under strong excitation condition

Authentication

[10a-W541-3] Temperature dependence of Cp₂Mg using in-situ monitoring in MOVPE reactor

[10a-W541-7] CVD growth of BN thin films by using B₂H₆