Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-W541-1~12] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 9:00 AM - 12:15 PM W541 (W541)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-W541-1] Time-resolved electroluminescence spectroscopy of deep ultraviolet AlGaN light-emitting diodes

〇Kazunobu Kojima¹, Yuki Yoshida², Masaki Shiraiwa², Yoshinari Awaji², Atsushi Kanno², Naokatsu Yamamoto², Akira Hirano³, Yosuke Nagasawa³, Masamichi Ippommatsu³, Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.NICT, 3.UV Craftory)

9:15 AM - 9:30 AM

[11a-W541-2] Structural characteristics of AlGaN multiple-quantum-wells
grown on c-plane AlN/sapphire templates with macro-steps (1)

〇Kazunobu Kojima¹, Yosuke Nagasawa², Akira Hirano², Masamichi Ippommatsu², Yoshio Honda³, Hiroshi Amano^3,4,5, Isamu Akasaki⁶, Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.UV craftory, 3.IMaSS, Nagoya Univ., 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.Meijo Univ.)

9:30 AM - 9:45 AM

[11a-W541-3] Structural characteristics of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps (2)

〇Yosuke Nagasawa¹, Kazunobu Kojima², Akira Hirano¹, Masamichi Ipponmatsu¹, Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴, Shegefusa Chichibu² (1.UV Craftory, 2.Tohoku Univ.-IMRAM, 3.Nagoya Univ.-IMaSS, 4.Meijo Univ.)

9:45 AM - 10:00 AM

△ [11a-W541-4] Optical properties of ultra-thin GaN/AlN quantum structures grown by metalorganic vapor phase epitaxy

〇Hirotsugu Kobayashi¹, Shuhei Ichikawa¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[11a-W541-5] Analysis of Potential Energy Fluctuation and Optical Constants in Al_1-xIn_xN Alloy

〇Daichi Imai¹, Tomoaki Yamaji¹, Makoto Miyoshi², Tetsuya Takeuchi¹, Takao Miyajima¹ (1.Meijo Univ., 2.Nagoya Inst. of Tech.)

10:15 AM - 10:30 AM

[11a-W541-6] Theoretical Calculation of Population Density and Radiative Decay Time of Biexciton

〇Kensuke Oki¹, Kentaro Nomachi¹, Bojin Lin¹, Kirito Shimura¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

10:45 AM - 11:00 AM

[11a-W541-7] Angle-resolved photoluminescence spectroscopy for a freestanding GaN crystal

〇Kazunobu Kojima¹, Kenichiro Ikemura², Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.Hamamatsu Photonics K.K.)

11:00 AM - 11:15 AM

[11a-W541-8] Analytical solution for quantum efficiency of radiation considering self-absorption process

〇Hidehiro Asai¹, Kazunobu Kojima², Shigefusa Chichibu², Koichi Fukuda¹ (1.AIST, 2.IMRAM-Tohoku Univ.)

11:15 AM - 11:30 AM

[11a-W541-9] A major nonradiative process in GaN studied by
photoacoustic spectroscopy using a piezoelectric device

〇Kazuto Yamazaki¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[11a-W541-10] Analysis of emission characteristics of deep levels in GaN by direct photo excitation

〇(B)Moe Kikuchi¹, Daisuke Uehara¹, Bei Ma¹, Ken Morita¹, Hideto Miyake², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Mie Univ.)

11:45 AM - 12:00 PM

[11a-W541-11] Evaluation of crystallinity in the depth direction of highly Si doped GaN by IR and Raman spectroscopy

〇(M2)Mingchuan Tang¹, Bei Ma¹, Ken Morita¹, Kohei Inoue², Atsushi Kobayashi², Hiroshi Fujioka², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.The Univ.of Tokyo)

12:00 PM - 12:15 PM

[11a-W541-12] Raman Scattering Investigation of Strain Evolution during Surface-Activated Bonding of GaN

〇(B)Ryo Tanabe¹, Takuya Onodera¹, Masahiro Uemukai¹, Toshiki Hikosaka², Shinya Nunoue², Kanako Shojiki³, Hideto Miyake^3,4, Maki Kushimoto⁵, Heajeong Cheong⁶, Yoshio Honda⁶, Hiroshi Amano⁶, Ryuji Katayama¹ (1.Grad.school of Eng., Osaka Univ., 2.Toshiba Corporation, 3.Grad.school of Eng., Mie Univ., 4.Grad.school of RIS,Mie Univ., 5.Grad.school of Eng., Nagoya Univ., 6.Nagoya Univ. IMaSS)

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