[11p-PA8-1~5] 9.3 Nanoelectronics

Mon. Mar 11, 2019 4:00 PM - 6:00 PM PA8 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

4:00 PM - 6:00 PM

[11p-PA8-1] Comparison of Dispersion energies of common-gate and non-common-gate single-electron turnstiles

〇Mika Yasuda¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

4:00 PM - 6:00 PM

[11p-PA8-2] Analysis of stability regions of single-common-gate triple-dot single-electron devices with asymmetric gate capacitances

〇Yusuke Watanabe¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

4:00 PM - 6:00 PM

[11p-PA8-3] Design of bubble-inspired single electron device mimicking behavior of bubble film

〇Nobuhiko Kurata¹, Takahide Oya¹ (1.Yokohama National Univ.)

4:00 PM - 6:00 PM

[11p-PA8-4] Statistical Survey of Gold Nanoparticle Arrays Assembled by Dielectrophoresis Aimed at Single-Electron Device Application

〇Makoto Moribayashi¹, Tomoki Yagai¹, Masataka Moriya¹, Hiroshi Shimada¹, Ayumi Hirano-Iwata², Fumihiko Hirose³, Yoshinao Mizugaki¹ (1.UEC Tokyo, 2.Tohoku Univ., 3.Yamagata Univ.)

4:00 PM - 6:00 PM

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer

〇(B)Bruno Kenichi Saika¹, Ryota Negishi¹, Yoshihiro Kobayashi¹ (1.Osaka University)

Session information

[11p-PA8-1~5] 9.3 Nanoelectronics

[11p-PA8-1] Comparison of Dispersion energies of common-gate and non-common-gate single-electron turnstiles

[11p-PA8-2] Analysis of stability regions of single-common-gate triple-dot single-electron devices with asymmetric gate capacitances

[11p-PA8-3] Design of bubble-inspired single electron device mimicking behavior of bubble film

[11p-PA8-4] Statistical Survey of Gold Nanoparticle Arrays Assembled by Dielectrophoresis Aimed at Single-Electron Device Application

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer

Authentication

Session information

[11p-PA8-1~5] 9.3 Nanoelectronics

[11p-PA8-1] Comparison of Dispersion energies of common-gate and non-common-gate single-electron turnstiles

[11p-PA8-2] Analysis of stability regions of single-common-gate triple-dot single-electron devices with asymmetric gate capacitances

[11p-PA8-3] Design of bubble-inspired single electron device mimicking behavior of bubble film

[11p-PA8-4] Statistical Survey of Gold Nanoparticle Arrays Assembled by Dielectrophoresis Aimed at Single-Electron Device Application

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag2S-based switches using graphene oxide layer

Authentication

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer