Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[11p-W321-1~14] 13.9 Compound solar cells

Mon. Mar 11, 2019 1:45 PM - 5:30 PM W321 (W321)

Kentaroh Watanabe(Univ. of Tokyo), Yasushi Shoji(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[11p-W321-1] [Young Scientist Presentation Award Speech] Improvement of InGaP growth rate on hydride vapor phase epitaxy

〇Yasushi Shoji¹, Ryuji Oshima¹, Kikuo Makita¹, Akinori Ubukata², Takeyoshi Sugaya¹ (1.AIST, 2.Taiyo Nippon Sanso)

2:00 PM - 2:15 PM

[11p-W321-2] High doping performance of HVPE-grown GaAs films for tunnel diodes

〇Ryuji Oshima¹, Yasushi Shoji¹, Kikuo Makita¹, Akinori Ubukata², Takeyoshi Sugaya¹ (1.AIST, 2.TNSC)

2:15 PM - 2:30 PM

▲ [11p-W321-3] High growth rate MOVPE: InGaP growth for low-cost PV application

〇Hassanet Sodabanlu¹, Akinori Ubukata², Kentaroh Watanabe¹, Takeyoshi Sugaya³, Yoshiaki Nakano⁴, Masakazu Sugiyama^1,4 (1.RCAST, U. of Tokyo, 2.Taiyo Nippon Sanso, 3.AIST, 4.School of Engineering, U. of Tokyo)

2:30 PM - 2:45 PM

[11p-W321-4] Observation of misfit and threading dislocations in buffer layers of IMM single junction InGaAs solar cells by multiphoton excitation photoluminescence

〇AKIO OGURA¹, Tomoyuki Tanikawa², Tatsuya Takamoto³, Ryuji Oshima⁴, Takeyoshi Sugaya⁴, Mitsuru Imaizumi¹ (1.JAXA, 2.IMR, Tohoku Univ., 3.SHARP Corp., 4.AIST)

2:45 PM - 3:00 PM

[11p-W321-5] Revealing unrecognized features of capping and underlying layers during the Templated-Liquid-Phase growth of indium phosphide

〇(PC)Ryoji Katsube¹, Yuming Yang¹, Yoshitaro Nose¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM

[11p-W321-6] New Asymmetric Waveguide with Discrete Translational Symmetry for Multi-striped Orthogonal Photon-Photocarrier Propagation Solar Cells

〇Akira Ishibashi¹, Yuto Oukura¹, Nobuo Sawamura¹ (1.RIES, Hokkaido Univ.)

3:30 PM - 3:45 PM

△ [11p-W321-7] Wavelength-conversion material-mediated semiconductor wafer bonding

〇Kodai Kishibe¹, Soichiro Hirata¹, Katsuaki Tanabe¹ (1.Kyoto Univ.)

3:45 PM - 4:00 PM

[11p-W321-8] Hydrogel-mediated semiconductor wafer bonding

〇Kodai Kishibe¹, Katsuaki Tanabe¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM

[11p-W321-9] Ohmic InP/Si Heterointerfaces by Direct Semiconductor Wafer Bonding

〇Ryoichi Inoue¹, Katsuaki Tanabe¹ (1.Kyoto Univ.)

4:15 PM - 4:30 PM

[11p-W321-10] Direct Semiconductor Wafer Bonding in Non-Cleanroom Environment

〇Ryoichi Inoue¹, Nagito Takehara¹, Katsuaki Tanabe¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM

[11p-W321-11] Semiconductor Wafer Bonding Mediated by Solution-Processed ZnO TCO

〇Tatsushi Yamashita¹, Soichiro Hirata¹, Kodai Kishibe¹, Ryoichi Inoue¹, Katsuaki Tanabe¹ (1.Kyoto Univ.)

4:45 PM - 5:00 PM

[11p-W321-12] Development of the GaAs//InGaAs dual junction solar cell with surface activated wafer bonding technique

〇Kentaroh Watanabe¹, Takashi Fukutani², Hassanet Sodabanlu¹, Yoshiaki Nakano^1,2, Masakazu Sugiyama^1,2 (1.RCAST, Univ. of Tokyo, 2.Eng, Univ. of Tokyo)

5:00 PM - 5:15 PM

[11p-W321-13] GaAs//Si Three-terminal Multi-junction Solar Cells using Smart Stack Technology

〇Kikuo Makita¹, Takeshi Tayagaki¹, Hidenori Mizuno¹, Masaaki Baba², Asuka Nakanishi², Hidetaka Takato¹, Noboru Yamada², Takeyoshi Sugaya¹ (1.AIST, 2.Nagaoka Univ. of Tech.)

5:15 PM - 5:30 PM

△ [11p-W321-14] Effect of Subcell Area Ratio on Three-terminal Smart Stack Multi-junction Solar Cell

〇Asuka Nakanishi¹, Masaaki Baba¹, Takeshi Tayagaki², Kikuo Makita², Takeyoshi Sugaya², Noboru Yamada¹ (1.Nagaoka Univ. of Technology, 2.AIST)

Session information