Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-W541-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 12, 2019 9:00 AM - 12:15 PM W541 (W541)

Narihito Okada(Yamaguchi Univ.), Hajime Fujikura(SCIOCS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-W541-1] HVPE-growth of AlN layers on patterned sapphire substrates

〇Hajime Fujikura¹, Taichiro Konno¹, Takeshi Kimura¹, Hideto Miyake² (1.SCIOCS Co. Ltd., 2.RIS, Mie Univ.)

9:15 AM - 9:30 AM

△ [12a-W541-2] Growth of Lattice-relaxed InGaN Thick Films by Tri-halide Vapor Phase Epitaxy

〇(M2)Rio Uei¹, Mitsuki Kawabe¹, Kentaro Ema¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (1.Tokyo Univ. of Agriculture and Technology)

9:30 AM - 9:45 AM

[12a-W541-3] GaN growth on {20-21} GaN template with very small number of
stacking faults by hydride vapor phase epitaxy

〇Syogo Shigu¹, Satoru Fujimoto², Narihito Okada², Jie Song³, Jung Han³, Kazuyuki Tadatomo² (1.Department of Eng,Yamaguchi Univ., 2.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 3.Yale Univ.)

9:45 AM - 10:00 AM

[12a-W541-4] Advanced technique for improving crystalline quality of GaN using multi stripe mask by hydride vapor phase epitaxy

〇Hiroki Ikeuchi¹, Takushi Kaneko², Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Technology for Innovation, Yamaguchi Univ., 2.Grad. School of Sci. & Eng., Yamaguchi Univ.)

10:00 AM - 10:15 AM

△ [12a-W541-5] Evaluation of III-V nitride layers grown homo-epitaxially on GaN bulks by photothermal deflection spectroscopy

〇Kiyotaka Fukuda^1,2, Shuhei Yashiro^1,2, Hajime Fujikura³, Taichiro Konno³, Takayuki Suzuki³, Tetsuji Fujimoto³, Takehiro Yoshida³, Takeyoshi Onuma², Tomohiro Yamaguchi², Tohru Honda², Masatomo Sumiya¹ (1.NIMS, 2.Kogakuin Univ., 3.SCIOCS)

10:15 AM - 10:30 AM

[12a-W541-6] Desorption energies of O impurities from polar GaN surfaces with kink and step structures

〇Takahiro Kawamura^1,2, Hiroki Takeda¹, Akira Kitamoto², Masayuki Imanishi², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa², Yoshihiro Kangawa³, Koichi Kakimoto³ (1.Mie Univ., 2.Osaka Univ., 3.RIAM,Kyushu Univ.)

10:45 AM - 11:00 AM

△ [12a-W541-7] High-rate growth of a thick freestanding GaN wafer with CH₄ by OVPE

〇(B)Masahiro Kamiyama¹, Yoshikazu Gunji¹, Haruya Kobayashi¹, Takahiro Oshiba¹, Akira Kitamoto¹, Masayuki Imanishi¹, Masashi Yoshimura¹, Masashi Isemura², Tomoaki Sumi³, Junichi Takino^1,3, Yoshio Okayama³, Masaki Nobuoka³, Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics Inc., 3.Panasonic Corporation)

11:00 AM - 11:15 AM

△ [12a-W541-8] Defect analysis for homoepitaxial GaN thick films grown by OVPE method

〇Miki Manabe¹, Tohei Tetsuya¹, Takino Junichi^2,3, Sumi Tomoaki², Imanishi Masayuki³, Mori Yusuke³, Sakai Akira¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Panasonic Corporation, 3.Grad. Sch. of Eng., Osaka Univ.)

11:15 AM - 11:30 AM

△ [12a-W541-9] Coalescence growth of GaN crystal on small diameter point seed with lithium addition by Sodium-Flux method

〇Kazuma Hamada¹, Yuki Sawada¹, Takumi Yamada¹, Kosuke Murakami¹, Masayuki Imanishi¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

△ [12a-W541-10] Investigation of relationship between leakage current and Burgers vector for individual dislocations in a GaN bulk single crystal grown using a Na-flux method

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

11:45 AM - 12:00 PM

△ [12a-W541-11] Monitoring of dissolved nitrogen by 4-point probe electrical resistivity on Sodium-Flux method

〇Ricksen Tandryo¹, Kosuke Murakami¹, Takumi Yamada¹, Tomoko Kitamura¹, Imanishi Masayuki¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

12:00 PM - 12:15 PM

[12a-W541-12] Effects of extra metals added during the acidic ammonothermal growth of GaN crystals

〇Daisuke Tomida¹, Quanxi Bao^1,3, Makoto Saito^1,2, Kohei Kurimoto³, Fukuma Sato¹, Tohru Ishiguro¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mitsubishi Chemical Corp., 3.Japan Steel Works)

Session information

[12a-W541-1~12] 15.4 III-V-group nitride crystals

[12a-W541-1] HVPE-growth of AlN layers on patterned sapphire substrates

△ [12a-W541-2] Growth of Lattice-relaxed InGaN Thick Films by Tri-halide Vapor Phase Epitaxy

[12a-W541-3] GaN growth on {20-21} GaN template with very small number of
stacking faults by hydride vapor phase epitaxy

[12a-W541-4] Advanced technique for improving crystalline quality of GaN using multi stripe mask by hydride vapor phase epitaxy

△ [12a-W541-5] Evaluation of III-V nitride layers grown homo-epitaxially on GaN bulks by photothermal deflection spectroscopy

[12a-W541-6] Desorption energies of O impurities from polar GaN surfaces with kink and step structures

△ [12a-W541-7] High-rate growth of a thick freestanding GaN wafer with CH₄ by OVPE

△ [12a-W541-8] Defect analysis for homoepitaxial GaN thick films grown by OVPE method

△ [12a-W541-9] Coalescence growth of GaN crystal on small diameter point seed with lithium addition by Sodium-Flux method

△ [12a-W541-10] Investigation of relationship between leakage current and Burgers vector for individual dislocations in a GaN bulk single crystal grown using a Na-flux method

△ [12a-W541-11] Monitoring of dissolved nitrogen by 4-point probe electrical resistivity on Sodium-Flux method

[12a-W541-12] Effects of extra metals added during the acidic ammonothermal growth of GaN crystals

Authentication

Session information

[12a-W541-1~12] 15.4 III-V-group nitride crystals

[12a-W541-1] HVPE-growth of AlN layers on patterned sapphire substrates

△ [12a-W541-2] Growth of Lattice-relaxed InGaN Thick Films by Tri-halide Vapor Phase Epitaxy

[12a-W541-3] GaN growth on {20-21} GaN template with very small number ofstacking faults by hydride vapor phase epitaxy

[12a-W541-4] Advanced technique for improving crystalline quality of GaN using multi stripe mask by hydride vapor phase epitaxy

△ [12a-W541-5] Evaluation of III-V nitride layers grown homo-epitaxially on GaN bulks by photothermal deflection spectroscopy

[12a-W541-6] Desorption energies of O impurities from polar GaN surfaces with kink and step structures

△ [12a-W541-7] High-rate growth of a thick freestanding GaN wafer with CH4 by OVPE

△ [12a-W541-8] Defect analysis for homoepitaxial GaN thick films grown by OVPE method

△ [12a-W541-9] Coalescence growth of GaN crystal on small diameter point seed with lithium addition by Sodium-Flux method

△ [12a-W541-10] Investigation of relationship between leakage current and Burgers vector for individual dislocations in a GaN bulk single crystal grown using a Na-flux method

△ [12a-W541-11] Monitoring of dissolved nitrogen by 4-point probe electrical resistivity on Sodium-Flux method

[12a-W541-12] Effects of extra metals added during the acidic ammonothermal growth of GaN crystals

Authentication

[12a-W541-3] GaN growth on {20-21} GaN template with very small number of
stacking faults by hydride vapor phase epitaxy

△ [12a-W541-7] High-rate growth of a thick freestanding GaN wafer with CH₄ by OVPE