Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12p-M113-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 12, 2019 1:15 PM - 3:30 PM M113 (H113)

Kaoru Toko(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[12p-M113-1] Low temperature fabrication of a crystalline Ge layer by gold-induced layer
exchange crystallization (GIC) method with a Ge-Au co-evaporation film

〇Koki Kakoi¹, Kennji Kasahara¹, Noboru Shimizu², Isao Tunoda², Takasi Manago¹ (1.Fukuoka Univ., 2.NIT KUmamoto college)

1:30 PM - 1:45 PM

[12p-M113-2] Electrical properties of GIC grown Ge thin films

Hidenori Higashi¹, Kenji Kasahara², Kohei Kudo¹, Shinya Yamada¹, Takeshi Kanashima¹, Isao Tsunoda³, Hiroshi Nakashima⁴, 〇Kohei Hamaya¹ (1.Osaka Univ., 2.Fukuoka Univ., 3.NIT Kumamoto College, 4.Kyushu Univ. GIC)

1:45 PM - 2:00 PM

[12p-M113-3] Electrical properties of GIC grown Ge thin film transistors

Hidenori Higashi¹, Kenji Kasahara², Keisuke Yamamoto³, Kohei Kudo¹, Shinya Yamada¹, Takeshi Kanashima¹, Hiroshi Nakashima⁴, 〇Kohei Hamaya¹ (1.Osaka Univ., 2.Fukuoka Univ., 3.Kyushu Univ., 4.Kyushu Univ. GIC)

2:00 PM - 2:15 PM

▼ [12p-M113-4] Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

〇(PC)Mel Hainey¹, Eddie (Chenhui) Zhou², Noritaka Usami¹ (1.Nagoya Univ., 2.UCLA)

2:15 PM - 2:30 PM

[12p-M113-5] Effect of Si substrate orientation on epitaxial growth of SiGe by printing and firing

〇(D)Masahiro Nakahara^1,4, Shogo Fukami¹, Mel F. Hainey, Jr.¹, Yoshihiko Nakagawa¹, Keisuke Arimoto², Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Kensaku Maeda³, Kozo Fujiwara³, Marwan Dhamrin⁴, Noritaka Usami¹ (1.Nagoya Univ., 2.CCST, Univ. Yamanashi, 3.IMR, Tohoku Univ., 4.Toyal)

2:30 PM - 2:45 PM

△ [12p-M113-6] Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization

〇Keitaro Inoue¹, Youki Wada¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

[12p-M113-7] Crystal growth of Ge and GeSn thin films on glass substrates by CW laser annealing

〇Ryo Matsumura¹, Wipakorn Jevasuwan¹, Naoki Fukata¹ (1.NIMS MANA)

3:00 PM - 3:15 PM

[12p-M113-8] Preventing formation of twins in Ge(111) thin film growth on c-plane sapphire substrate

〇(B)Ko Miyazaki¹, Fumiyasu Ohtake², Takeru Okada², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Sch.Eng.,Tohoku Univ., 2.Grad.Sch.Eng.,Tohoku Univ.)

3:15 PM - 3:30 PM

[12p-M113-9] Effects of insertion of amorphous layer for bonding of Ge on glass

〇Hirofumi Ono¹, Yutaka Takafuji¹, Kentarou Sawano¹ (1.Tokyou City Univ)

Session information

[12p-M113-1~9] 15.5 Group IV crystals and alloys

[12p-M113-1] Low temperature fabrication of a crystalline Ge layer by gold-induced layer
exchange crystallization (GIC) method with a Ge-Au co-evaporation film

[12p-M113-2] Electrical properties of GIC grown Ge thin films

[12p-M113-3] Electrical properties of GIC grown Ge thin film transistors

▼ [12p-M113-4] Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

[12p-M113-5] Effect of Si substrate orientation on epitaxial growth of SiGe by printing and firing

△ [12p-M113-6] Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization

[12p-M113-7] Crystal growth of Ge and GeSn thin films on glass substrates by CW laser annealing

[12p-M113-8] Preventing formation of twins in Ge(111) thin film growth on c-plane sapphire substrate

[12p-M113-9] Effects of insertion of amorphous layer for bonding of Ge on glass

Authentication

Session information

[12p-M113-1~9] 15.5 Group IV crystals and alloys

[12p-M113-1] Low temperature fabrication of a crystalline Ge layer by gold-induced layerexchange crystallization (GIC) method with a Ge-Au co-evaporation film

[12p-M113-2] Electrical properties of GIC grown Ge thin films

[12p-M113-3] Electrical properties of GIC grown Ge thin film transistors

▼ [12p-M113-4] Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

[12p-M113-5] Effect of Si substrate orientation on epitaxial growth of SiGe by printing and firing

△ [12p-M113-6] Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization

[12p-M113-7] Crystal growth of Ge and GeSn thin films on glass substrates by CW laser annealing

[12p-M113-8] Preventing formation of twins in Ge(111) thin film growth on c-plane sapphire substrate

[12p-M113-9] Effects of insertion of amorphous layer for bonding of Ge on glass

Authentication

[12p-M113-1] Low temperature fabrication of a crystalline Ge layer by gold-induced layer
exchange crystallization (GIC) method with a Ge-Au co-evaporation film