The 66th JSAP Spring Meeting, 2019

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 10, 2019 9:00 AM - 12:00 PM 70A (70th Anniversary Auditorium)

Koji Kita(Univ. of Tokyo)

9:30 AM - 9:45 AM

[10a-70A-3] Epitaxially grown aluminum oxide monolayer on 4H-SiC(0001) surfaces

〇Shotaro Oie1, Takashi Kajiwara1, Anton Visikovskiy1, Tetsuro Shirasawa2, Takushi Imori3, Fumio Komori3, Satoru Tanaka1 (1.Kyushu Univ., 2.AIST, 3.Univ. of Tokyo)

Keywords:SiC