[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-4] Evaluation of the surface potential of oxidized silicon carbide by a Laser Terahertz Emission Microscope

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1.SCREEN, 2.ILE, Osaka Univ., 3.Graduate School of Eng., Osaka Univ.)

Keywords:SiO2/SiC interface, Terahertz Wave, Surface Potential

We evaluated SiO₂/SiC interface using a laser terahertz emission microscope (LTEM) and examined if there is a correlation between the measured THz peak amplitude and the calculated surface potential (ψ_s) from the C-V curve. Although the THz peak amplitude of the sample with better interface property shows a clear correlation with ψ_s, that of the sample with high interface state density has a relatively poor correlation with ψ_s. We see a correlation between THz amplitude of SiO₂/SiC interface and ψ_s. We think that LTEM can be effective for evaluation of the surface potential of oxidized silicon carbide.