[10a-M113-1~6] 6.2 Carbon-based thin films

[10a-M113-1] A Study of SOI Wafer with SiC-BOX Layer using Room-Temperature Bonding

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:SOI wafer, SiC, Room-temprature bonding

We have been studying a new SOI wafer with SiC-BOX layer to suppress self-heating of power devices. In this studying, we demonstrated that the SOI wafer was fabricated by bonding at room temprature in ultrahigh vacuum.