[10a-M114-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10a-M114-11] Fabrication of n-type TFT using μ CLBA induced Si stripe

〇Mitsuki Hirasue¹, Wenchang Yeh¹ (1.Shimane Univ.)

Keywords:Thin film transistor, laser anneal, Silicon thin film

In this laboratory, we proposed a method called μ chebron laser beam annealing (μ CLBA) which is an application of continuous wave laser crystallization (CLC) method. In this method, the laser is shaped into a chevron type and scanned on the Si film, whereby a single crystal is obtained at the center. In this study, in order to apply Si crystallized by μ CLBA to TFT, film formation was mainly performed by sputtering method, TFT was fabricated and evaluated.