Preparation of Single Crystalline Stripes by mCLBS using Sputtered Si Films

Tatsuki Koyanagi; Toshiki Shirakawa; Mitsuki Hirasue; Wenchang Yeh

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10a-M114-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Mar 10, 2019 9:00 AM - 12:00 PM M114 (H114)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

11:30 AM - 11:45 AM

[10a-M114-10] Preparation of Single Crystalline Stripes by mCLBS using Sputtered Si Films

〇Tatsuki Koyanagi¹, Toshiki Shirakawa¹, Mitsuki Hirasue¹, Wenchang Yeh¹ (1.Shimane Univ.,Interdisciplinary Fac. Sci. & Engng.)

Keywords:Sputter, Laser annealing, Silicon tin film

Si films was deposited by the sputtering method and we have realized lateral growth by the μCLBA method. We have fabricated TFT using it and investigated its characteristics.