The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10a-M114-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Mar 10, 2019 9:00 AM - 12:00 PM M114 (H114)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

11:00 AM - 11:15 AM

[10a-M114-8] Schmid Factor of the Deformation Twinning in the CW Laser Crystallized Si Film

Nobuo Sasaki1,2, Muhammad Arif2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)

Keywords:laser crystallization, cw laser, dislocation

Schmid factors are calculated for the glides of the partial dislocations on the {111} twinning planes of the grown films having (100) and (110) textures in the scan direction. The calculated Schmid factors explain that the deformation twinning is prevented if the grown Si film has (100) texture in the scan direction.