The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10a-M114-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Mar 10, 2019 9:00 AM - 12:00 PM M114 (H114)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

10:45 AM - 11:00 AM

[10a-M114-7] Grain-Shape Control of LTPS Thin Films by Selective Laser Annealing

〇(B)Takahiro Yamada1, Kaname Imokawa1,2, Daisuke Nakamura1, Tetsuya Goto3, Hiroshi Ikenoue1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

Keywords:Laser Annealing, Poly-Si, TFT

In the selective laser annealing (SLA) method, Excimer laser beam is selectively irradiated to a channel region of a low-temperature crystallization of poly-Si (LTPS) thin-film transistor (TFT). In this method, it is possible to solve an increase in the size of the display substrate. However, the size of the grain is random, and the TFT characteristics are unstable. Therefore, in previous study, we propose to make multi-line beam using a mask to induce lateral grain growth. Therefore, the number of grain boundaries at the channel region can be controlled. In this presentation, we report that the grain shape and the number of grain boundaries can be controlled using a new dot pattern mask.