A study of the effect of selective thermal decomposition under NH<sub>3</sub>/H<sub>2</sub> mixed atmosphere on electric properties of GaN HEMT

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

Sun. Mar 10, 2019 9:00 AM - 11:45 AM M121 (H121)

Kenji Shiojima(Univ. of Fukui)

11:30 AM - 11:45 AM

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

Keywords:Gallium nitride, GaN HEMT, selective thermal decomposition