[10a-M121-1~10] 13.7 Compound and power electron devices and process technology

△ [10a-M121-4] Evaluation of Temperature-Dependent Stress in GaN HEMT by Raman Spectroscopy

〇Tomoyuki Uchida¹, Ryuichi Sugie¹ (1.Toray Research Center)

Keywords:stress, Raman, Galium Nitride

We evaluated the temperature dependence of the stress in GaN HEMT. The measurement points are located under the source electrode and gate electrode in the cross section of the GaN HEMT. We investigated the temperature-dependent stress and determined the stress components at each temperature. The horizontal stress largely changed as the temeperature changed, and the compressive stress increased at high temperature. In my presentation, I will discuss about the mechanism of the temperature-dependent stress.