The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[10a-PB2-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 10, 2019 9:30 AM - 11:30 AM PB2 (PB)

9:30 AM - 11:30 AM

[10a-PB2-12] Dependence of active layer thickness on 1.5 μm PL properties in Si/B-doped β-FeSi2/Si stacked structures

〇(M2)Naohiro Oka1, Ryuji Satou1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)

Keywords:semiconductor, beta-FeSi2