[10a-W521-1~12] 17.2 Graphene

[10a-W521-6] Electrical characterization of gate tunable lateral graphene tunnel diodes

〇Kanako Shiga¹, Kenta Sugawara², Akira Satou², Hirokazu Fukidome², Taiichi Otsuji², Takashi Uchino¹ (1.Tohoku Inst. Tech., 2.Tohoku Univ. RIEC)

Keywords:graphene, tunnel diode, gate tunable

Two-dimensional materials have attracted attention in recent years because of their excellent electrical properties and can develop innovative devices. In particular, single-layer graphene with the high carrier mobility and saturation velocity could push the limit of high-frequency devices. In this work, we focus on electrical characterization of gate tunable graphene lateral tunnel diodes which have p-type rectifying characteristics for positive gate voltages and n-type rectifying characteristics for negative gate voltages. This behavior is attributed to the tunneling and the tunnel barrier height could be controlled by applying gate voltage.