11:15 AM - 11:30 AM
△ [10a-W521-9] Integrated Synthesis of Graphene Nanoribbon Transistors with High On/Off Ratio
Keywords:Graphene nanoribbon, transistor, Integration
In recent years, graphene nanoribbon (GNR), strips of two-dimensional (2D) graphene into one-dimensional (1D) structure gather intense attentions because of their superior electrical features. Although GNR can be made in a variety of ways, the reliable site and alignment control of GNR with high on/off current ratios remains a challenge.
Up to now, we have developed a novel method based on the advanced plasma CVD with nanoscale Ni catalyst (Ni nanobar) for directly fabricating suspended GNR devices.
In this study, we attempted to improve on/off current ratio of field-effect transistor with GNR grown by our method. It is known that the band gap of GNR is inversely proportional to the width of GNR, indicating narrower GNR can obtain higher on/off. To narrow down the width of GNR, GNR growth was carried out with various nanobars catalysts. Then, we found that sub 10 nm width GNR can easily be synthesized from Ge nanobar. Therefore, the on/off ratio of GNR grown from Ge nanobar shows very high on/off ratio (~104) at room temperature. This result shows that GNR grown from Ge nanobar includes higher potential for the future application of GNR for various semiconductor devices.
Up to now, we have developed a novel method based on the advanced plasma CVD with nanoscale Ni catalyst (Ni nanobar) for directly fabricating suspended GNR devices.
In this study, we attempted to improve on/off current ratio of field-effect transistor with GNR grown by our method. It is known that the band gap of GNR is inversely proportional to the width of GNR, indicating narrower GNR can obtain higher on/off. To narrow down the width of GNR, GNR growth was carried out with various nanobars catalysts. Then, we found that sub 10 nm width GNR can easily be synthesized from Ge nanobar. Therefore, the on/off ratio of GNR grown from Ge nanobar shows very high on/off ratio (~104) at room temperature. This result shows that GNR grown from Ge nanobar includes higher potential for the future application of GNR for various semiconductor devices.