Epitaxial growth of III-nitrides on SiC thin film formed by carbonization of Si surface

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sun. Mar 10, 2019 9:00 AM - 12:15 PM W541 (W541)

Tsutomu Araki(Ritsumeikan Univ.), Yoshihiro Kangawa(Kyushu Univ.)

10:00 AM - 10:15 AM

〇Momoko Deura¹, Yifu Zhu¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (1.Univ. of Tokyo)

Keywords:GaN growth on Si substrate, SiC buffer layer, Si surface carbonization