Dependence of TMAl preflow condition on GaN growth on surface carbonized Si substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sun. Mar 10, 2019 9:00 AM - 12:15 PM W541 (W541)

Tsutomu Araki(Ritsumeikan Univ.), Yoshihiro Kangawa(Kyushu Univ.)

10:15 AM - 10:30 AM

〇Yifu Zhu¹, Takeshi Momose¹, Yukihiro Shimogaki¹, Momoko Deura¹ (1.Univ. of Tokyo)

Keywords:gallium nitride, TMAl preflow, surface carbonized Si substrates