[10a-W541-1~12] 15.4 III-V-group nitride crystals

△ [10a-W541-8] Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures

〇(M1)Takashi Fujita¹, Shigeta Sakai¹, Yuma Ikeda¹, Atsushi A. Yamaguchi¹, Yuya Kanitani², Shigetaka Tomiya² (1.Kanazawa Inst. Tech., 2.Sony)

Keywords:InGaN-QWs, Potential fluctuation, Mobility edge

The potential fluctuation in the InGaN quantum wells greatly affects the characteristics of the optical device. Mobility edge, which is the boundary energy between the localized and delocalized states, can be an index to evaluate the potential fluctuation of carriers. In this study, mobility edge related to this fluctuation in a practical and theoretical way, and revealed that the well-used mobility edge evaluation method can not always give the correct result.