The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[10a-W611-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Sun. Mar 10, 2019 9:30 AM - 12:00 PM W611 (W611)

Katsuhiko Shirasawa(AIST)

11:00 AM - 11:15 AM

[10a-W611-6] Performance of Bifacial Amorphous Si Quintuple-Junction Solar Cells under LED Light Illumination

Makoto Konagai1, Ryo Sasaki1 (1.Tokyo City Univ.)

Keywords:solar cell, amorphous Si solar cell

Electrical characteristics of bifacial quintuple-junction amorphous Si solar cells under low illuminance were evaluated. In particular, the irradiation dependence of Voc was measured. In the single-junction cell and the triple-junction cell, the ratio (ΔVoc (1/10)) of the decrease in the open circuit voltage when the light intensity becomes 1/10 is 0.10 V / cell, and within the range expected from the theory. But Δ Voc (1/10) is as high as 0.16 V / cell in the quintuple -junction cell. The reason why the decrease in the open-circuit voltage increases for quintuple-junction solar cells is as follows: (i) the leakage current is large due to the use of textured SnO2 with rough surface as the TCO substrate, (ii) n-a-Si:H is as thick as 60 nm, and electrical characteristics are greatly affected by the a-Si layer deposited around the metal electrode through the high conductive n-a-Si:H layer.