[10a-W641-1~10] 6.3 Oxide electronics

[10a-W641-6] Modulation of VO₂-channel conductivity in ferroelectric HfO₂ gate three-terminal device

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

Keywords:metal-insulator transition, ferroelectricity, Mott transistor

A three-terminal device with the metal-insulator-transition VO₂ channel is fabricated by using the ferroelectric HfO₂ gate insulator. Due to the polarization reversal in ferroelectric HfO₂, the non-volatile modulation of the VO₂ channel conductivity is obtained.