[10a-W810-1~10] 12.2 Characterization and Materials Physics

△ [10a-W810-3] Nucleation mechanism of metal-vapor atoms on the amorphous diarylethene surface with a low glass-transition temperature

〇Ikumi Takemoto¹, Tsuyoshi Tsujioka¹ (1.Osaka Kyoiku Univ.)

Keywords:diarylethene, selective deposition, nucleation

We have reported selective metal-vapor deposition on the photochromic diarylethene (DAE) surface. Selective metal-vapor deposition is a promising method to prepare fine metal patterns using maskless evaporation. This phenomenon signifies metal-vapor atoms are deposited on the colored surface but not on the colorless surface. On the colorless surface with a low Tg, metal-vapor atoms are adsorbed, diffuse, and then desorb. We, however, found that metal-deposition started at a specific time (deposition-threshold time, t_th) even on the colorless surface by continuous evaporation. We elucidated that metal-nucleation sites became chemical reactants between metal atoms and surface DAE molecules. The nucleation sites increase during metal diffusion. When the sites are located in the diffusion range of surface-metal atoms, metal-atom nucleation for film-formation starts at t_th. This result would be an important knowledge for the electrode preparation of organic devices based on selective metal-vapor deposition.