Fabrication of Cu<sub>2</sub>ZnSnS<sub>4</sub> films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide

Masahiro Tahashi; Makoto Takahashi; Hideo Goto; Takashi Harada; Shigeru Ikeda; Kenji Yoshino

Presentation information

Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[10a-W922-1~9] 15.2 II-VI and related compounds

Sun. Mar 10, 2019 9:00 AM - 11:15 AM W922 (Multi-Purpose Digital Hall)

Kazuyuki Uno(Wakayama Univ.)

9:15 AM - 9:30 AM

[10a-W922-2] Fabrication of Cu₂ZnSnS₄ films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide

〇Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹, Takashi Harada², Shigeru Ikeda³, Kenji Yoshino⁴ (1.Chubu Univ., 2.Osaka Univ., 3.Konan Univ., 4.Univ. of Miyazaki)

Keywords:Cu2ZnSnSe4, spin-coated Cu-Zn-Sn precursor, dimethyl selenide

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Presentation information

[10a-W922-1~9] 15.2 II-VI and related compounds

[10a-W922-2] Fabrication of Cu2ZnSnS4 films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide

[10a-W922-2] Fabrication of Cu₂ZnSnS₄ films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide