[10a-W922-1~9] 15.2 II-VI and related compounds

▼ [10a-W922-5] Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy

〇(M2)HyoChang Jang¹, Kento Matsuo¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga Univ.)

Keywords:ZnCdO, transparent conductive oxide, molecular beam epitaxy

Rocksalt (rs) Zn_1-xCd_xO (ZnCdO) is expected to use as a II-VI semiconductor material, ZnO have been rapidly and widely developed for laser diodes and transparent conductive oxide (TCO) because of high transparency in wide wavelength range. In the previous study, we found that the largest band gap of 3.1 eV was obtained in ZnCdO with Cd composition x~0.6. However, as compared to other TCO materials, the band gap energy is still low and must be improved. Since it is difficult to decrease Cd composition due to the phase transition, the increase of an electron concentration might be effective to improve the optical band gap by the Burstein-Moss shift.
Here, we have investigated the effect of Al-doping on the structural, optical and electrical properties in ZnCdO.