The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.6 Probe Microscopy

[10a-W933-1~8] 6.6 Probe Microscopy

Sun. Mar 10, 2019 9:00 AM - 11:00 AM W933 (W933)

Yoichi Otsuka(Osaka Univ.)

9:15 AM - 9:30 AM

[10a-W933-2] Multi-channel Characterization and Electrically-driven Migration of the Subsurface Hydrogen on Rutile TiO2(110)-1×1 by nc-AFM/STM/KPFM at 78 K

〇(D)Quanzhen Zhang1, Huan Fei Wen1, Yuuki Adachi1, Yoshitaka Naitoh1, Yan Jun Li1, Yasuhiro Sugawara1 (1.Osaka Univ.)

Keywords:Subsurface hydrogen, TiO2(110), nc-AFM/STM/KPFM

Subsurface defects are drawing increased research interest recently due to its dramatic modification on the physical and chemical properties of the nanoscale materials [1, 2]. Therefore, the understanding of the subsurface defects becomes important in clarifying the catalytic mechanism of titanium dioxide. In this study, for the first time, we have systematically investigated and deliberately manipulated the subsurface hydrogen Hsub on reduced rutile TiO2(110)-1×1 with atomic resolution by a combination of noncontact atomic force microscopy (nc-AFM), scanning tunneling microscopy (STM) and Kelvin probe force microscopy (KPFM) at 78 K. Four different configurations of the Hsub, including the monomer, dimer, trimer and tetramer Hsub, are clearly characterized and distinguished. Specifically, it is experimentally demonstrated that the Hsub is negatively charged by the bright contrast of the Hsub in the KPFM image. In addition, we also demonstrate the ability to reversibly migrate the Hsub between the subsurface and surface layers, which is electrically driven by controlling the voltage pulse with different polarities. The underlying mechanism of the reversible cross-layer migration process can be explained by the electron excitation of the Hsub induced by the inelastic tunneling electrons and the local electric filed effect in the tunneling junction [3]. Our study provides a good reference for the systematic investigation and unprecedented manipulation approach of the subsurface defect at the single atom level and potentially have an overriding effect on revolutionizing the investigation and technological applications of the metal oxides.