The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[10p-PA4-1~7] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Sun. Mar 10, 2019 1:30 PM - 3:30 PM PA4 (PA)

1:30 PM - 3:30 PM

[10p-PA4-2] Photoluminescence enhancement effect of semiconductor quantum dots by localized surface plasmon

Tomoki Narazaki1, DaeGwi Kim1 (1.Osaka City Univ.)

Keywords:localized surface plasmon, semiconductor quantum dot, layer-by-layer method

We focused on the effect of increasing the light absorption rate of semiconductor quantum dots (QDs) in the photoluminescence (PL) enhancement effect by localized surface plasmon. We fabricated bilayer structures of Ag nanoparticles (NPs) and CdS QDs by a layer-by-layer method and changed the absorption energy of CdS QDs to the localized surface plasmon energy of Ag nanoparticles, so that we investigated the resonance effect on absorption. By controlling the distance between the Ag NPs and CdS QDs with the polymer layers, the PL intensity of CdS QDs was changed greatly.