[10p-PA4-1~7] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[10p-PA4-6] Theoretical analysis of multiple-barrier silicon/fluoride heterostructure resonant tunneling diodes with metal emitter

〇Kensuke Ichikawa¹, Hiroki Tonegawa¹, Kodai Hirose¹, Kizashi Mikami¹, Satoshi Fukuyama¹, Yoshiro Kumagai¹, Masahiro Watanabe¹ (1.Tokyo Tech)

Keywords:smiconductor, resonant tunneling diodes