[10p-PA7-1~8] 9.5 New functional materials and new phenomena

△ [10p-PA7-8] Strain-induced 1/f noise of electrical resistivity in Ta thin films deposited by RF-magnetron sputtering

〇(B)Ryota Uesugi¹, Takashi Komine¹, Masaomi Mizuno¹, Ryo Ando², Hideo Akabane¹ (1.Ibarali University, 2.ITIC of Ibaraki prefecture)

Keywords:Ta thin film, 1/f noise

In this study, we have investigated relation between crystal structure and electrical resistivity in Ta thin films deposited by RF-magnetron sputtering by means of measuring resistivity and resistance noise.
The measurement of resistance noise enable us to detect the existance of strained structure in thin films.