4:00 PM - 6:00 PM
[10p-PA8-1] Graphite/Graphene growth from amorphous carbon thin film as a solid source
Keywords:Growth, Amorphous carbon
In order to develop large area and high-quality graphene with the use of the process based on CVD (chemical vapors deposition), we attempt systematical study on the growth of graphene/graphite from amorphous carbon thin film as a solid source. In this study, we used nickel (Ni) and copper (Cu) foils, on which amorphous carbon was deposited. The Ni foils was annealed at the temperatures from 600 to 800℃. Then, the graphite has formed on Ni surfaces at the 650 and 700℃. At the higher of temperature, carbon thin film disappeared and appeared Nickel oxide on the surfaces. Meanwhile, the Cu foils heated at 900℃ and 950℃ and we found that longer the time to heating the amorphous carbon coverage on a surface to become less and finally vanish. We suspected that carbon atoms on the Cu surfaces diffused to the grain boundary and the edge of the foil. These results suggest that the optimum temperature of this growth should be lower than that of the conventional CVD to form graphene.